余学峰，男，中科院新疆理化技术研究所研究员，博士生导师。 从1986年起一直从事半导体辐射物理研究工作，主持完成了国家“863”、“973”、 “科技支撑”及国家科学自然基金等多项重要课题的研究任务，在星用微电子器件辐射效应、损伤机理及抗辐射加固工艺研究等方面，取得多项重要研究成果。 

  余学峰曾获得第六届中国优秀科技青年奖、中科院科技进步一等奖，新疆维吾尔自治区科技进步一、二、三等奖，享受国务院颁发的政府特殊津贴，发表论文100余篇。 

主要研究领域： 

1. 电子器件辐射效应与损伤机理研究； 

2. 星用电子器件可靠性保障技术和评估方法研究； 

代表性文章 

(1) Xiaowen Liang; Jiangwei Cui; Qiwen Zheng; Jinghao Zhao; Xuefeng Yu*; Jing Sun; Dan Zhang; Qi Guo ; Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET, Radiation Effects and Defects in Solids, 2021, 12(176) 

(2) Haonan Feng; Sheng Yang; Xiaowen Liang; Dan Zhang; Xiaojuan Pu; Xu Cui; Haiyang Wang; Jing Sun;  Xuefeng Yu*; Qi Guo ; Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs, Journal of Nanoelectronics and Optoelectronics, 2021, 16(9): 1423-1429 

(3) Yang Sheng; Liang Xiaowen; Cui Jiangwei; Zheng Qiwen; Sun Jing; Liu Mohan; Zhang Dan; Feng Haonan; Yu Xuefeng*; Xiang Chuanfeng; Li Yudong; Guo Qi ; Impact of switching frequencies on the TID response of SiC power MOSFETs, Journal of Semiconductors, 2021, 42(8): 1-4 

(4) Xiaowen Liang; Jiangwei Cui; Qiwen Zheng; Jinghao Zhao; Xuefeng Yu*; Jing Sun; Dan Zhang; Qi Guo ; Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET, Radiation Effects and Defects in Solids, 2020, 2020(1) 

(5) Qiwen Zheng; Jiangwei Cui; Xuefeng Yu; Wu Lu; Chengfa He; Teng Ma; Jinghao Zhao; Diyuan Ren; Qi Guo ; Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose, IEEE Transactions on Nuclear Science, 2018, 65(2): 691-697 

(6) FENG Haonan, YANG Sheng, LIANG Xiaowen, ZHANG Dan, PU Xiaojuan, SUN Jing, WEI Ying, CUI Jiangwei, LI Yudong, YU Xuefeng*, GUO Qi. Static and Dynamic Radiation Damage of Silicon Carbide VDMOS and Their Comparison[J]. Atomic Energy Science and Technology, 2022, 56(4): 767-774. 

(7) Liang Xiaowen, Feng Haonan, Pu Xiaojuan, Cui Jiangwei, Sun Jing, Wei Ying, Zhang Dan, Yu Xuefeng, Guo Qi.Study of heavy ion induced single event gate rupture effect in SiC MOSFETs [J]. Japanese Journal of Applied Physics, 2022, 61(8): 084002. 

(8) Ma, Teng ; Zheng, Qi-Wen; Cui, Jiang-Wei; Zhou, Hang; Su, Dan-Dan; Yu, Xue-Feng * ; Guo, Qi  An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation， CHINESE PHYSICS LETTERS 2017.6 34(7) 

(9) Zheng Qi-Wen; Cui Jiang-Wei ; Zhou Hang; Yu De-Zhao; Yu Xue-Feng(*) ; Lu Wu; Guo Qi; Ren Di-Yuan， Analysis of functional failure mode of commercial deep  sub-micron SRAM induced by total dose irradiation， Chinese Physics B 2015.10    24 (10) 

(10) Zheng, Qiwen; Cui, Jiangwei; Liu, Mengxin; Su, Dandan; Zhou, Hang; Ma, Teng; Yu, Xuefeng;Lu, Wu; Guo, Qi; Zhao, Fazhan ; Direct measurement and analysis of total ionizing dose effect on130 nm PD SOI SRAM cell static noise margin, CHINESE PHYSICS B, 2017, 26(9) 

研究领域： 

微电子器件辐射物理与可靠性物理