李豫东，博士，研究员，博士生导师，2009年毕业于中国科学院长春光学精密机械与物理研究所光学工程专业，获工学博士学位，目前主要从事电子器件与系统的辐射效应与抗辐射加固研究。主持863、国家自然科学基金、中科院重点部署、中科院装备研制、西部之光等项目20余项，发表论文110余篇，授权发明专利18项，软件著作权登记17项。 

主要荣誉： 

2014年、2015年、2018年度新疆科技进步一等奖共3项 

第八届新疆青年科技奖 

中科院青促会优秀会员 

中国电子学会优秀科技工作者 

[1] Liu Bingkai, Li Yudong^*, Wen Lin, et al. Displacement damage effects in backside illuminated CMOS image sensors. IEEE Transactions on Electron Devices, 2022, 69(6): 2907-2914. 

[2] Chen Jiawei, Li Yudong^*, Maliya Heini, et al. Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers. Japanese Journal of Applied Physics, 2022, 61(1): 012001. 

[3] Li Yudong, Liu Bingkai, Wen Lin, et al. Role of the oxide trapped charges in charge coupled device ionizing radiation induced dark signal. Radiation Physics and Chemistry, 2021, 189: 109722. 

[4] Liu Bingkai, Li Yudong*, Wen Lin, et al. Analysis of dark signal degradation caused by 1 MeV neutron irradiation on backside-illuminated CMOS image sensors. Chinese Journal of Electronics, 2021, 30(01): 180-184. 

[5] Liu Bingkai, Li Yudong*, Wen Lin, et al. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors. Results in Physics, 2020, 19: 103443. 

[6] Zhang Xiang, Li Yudong*, Wen Lin, et al. Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors. Journal of Nuclear Science and Technology, 2020, 57(9): 1015-1021. 

[7] Liu Bingkai, Li Yudong*, Wen Lin, et al. Investigation of random telegraph signal in CMOS image sensors irradiated by protons. Journal of Nuclear Science and Technology, 2020, 58(5): 610-619. 

[8] Chen Jiawei, Li Yudong^*, Maliya Heini, et al. Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation, AIP Advances, 2020, 10(11): 115216. 

[9] Li Yudong, Wen Lin, Huang Jianyu, et al. Analysis on the radiation effects of a charge-coupled device in a space debris detection satellite in orbit. Journal of Remote Sensing, 2019, 23(1): 116-124. 

[10] Cai Yulong, Guo Qi, Li Yudong^*, et al. Heavy ion-induced single event effects in active pixel sensor array, Solid State Electronics, 2019, 152: 93-99. 

研究领域： 

1、半导体材料与器件辐射效应机理 

2、抗辐射电子器件与智能装备 

3、光电成像器件与成像系统