李豫东，博士，研究员，博士生导师，2009年毕业于中国科学院长春光学精密机械与物理研究所光学工程专业，获工学博士学位，目前主要从事电子材料、器件与系统的辐射效应与抗辐射加固研究。主持863、国家自然科学基金、中科院重点部署、中科院装备研制、西部之光等项目20余项，获新疆科技进步一等奖4项、新疆青年科技奖1项，发表SCI等论文140余篇，授权发明专利23件、软件著作权22项。获中国科学院2023年度先锋人物（全院仅2名）、中国电子学会“优秀科技工作者”等荣誉称号。 

主要荣誉： 

2015年、2018、2021、2023年度新疆科技进步一等奖共4项 

中国科学院2023年度先锋人物

第八届新疆青年科技奖 

中国科学院青促会优秀会员 

中国电子学会“优秀科技工作者 ”

[1] Zhao Zitao, Wen Lin, Li Yudong*, Liu Bingkai, Feng Jie, Yang Zhikang, Cui Yihao and Guo Qi, Mechanisms of Dark Current Increase and Pixel Anomalies Induced by 2 GeV Ta-irradiation in 8T-CMOS Image Sensors, IEEE Transactions on Nuclear Science, 2024.

[2] Liu Bingkai, Li Yudong^*, Wen Lin, Zhao Jinghao, Zhou Dong, Feng Jie, Guo Qi. Displacement damage effects in backside illuminated CMOS image sensors. IEEE Transactions on Electron Devices, 2022, 69(6): 2907-2914.

[3] Chen Jiawei, Li Yudong*, Maliya Heini, Liu Bingkai, Guo Qi, Ren Xiaotang, He Chengfa, Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers, Japanese Journal of Applied Physics; 2022, 61:012001.

[4] Chen Jiawei, Li Yudong*, Heini Maliya, Guo Qi, Zhou Dong, Wen Lin; Annealing effects of 850 nm vertical-cavity surface-emitting lasers after proton irradiation; Heliyon; 2022, 8(9):e10594.

[5] Li Yudong, Liu Bingkai, Wen Lin, Wei Ying, Zhou Dong, Feng Jie, Guo Qi. Role of the oxide trapped charges in charge coupled device ionizing radiation induced dark signal. Radiation Physics and Chemistry, 2021, 189: 109722.

[6] Liu Bingkai, Li Yudong^*, Wen Lin, Zhou Dong, Feng Jie, Zhang Xiang, Cai Yulong, Fu Jing, Chen Jiawei, Guo Qi. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors. Results in Physics, 2020, 19: 103443.

[7]Zhang Xiang, Li Yudong*, Wen Lin, Feng Jie, Zhou Dong, Cai Yulong, LiuBingkai, Fu Jing, Guo Qi. Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors. Journal of Nuclear Science and Technology, 2020, 57(9): 1015-1021.

[8] Liu Bingkai, Li Yudong^*, Wen Lin, Zhou Dong, Feng Jie, Zhang Xiang, Cai Yulong, Fu Jing, Guo Qi. Investigation of random telegraph signal in CMOS image sensors irradiated by protons. Journal of Nuclear Science and Technology, 2020, 58(5): 610-619.

[9] 李豫东, 文林, 黄建余, 文延, 张科科, 郭旗. 空间碎片探测卫星成像CCD的在轨辐射效应分析. 遥感学报, 2019, 23(1): 116-124.

[10] Cai Yulong, Guo Qi, Li Yudong*, Wen Lin, Zhou Dong, Feng Jie, Ma Lindong, Zhang Xiang, Wang Tianhui, Heavy ion-induced single event effects in active pixel sensor array, Solid State Electronics, 2019, 152: 93-99.

代表性专利： 

(1) 李豫东; 张巍; 施炜雷; 郭旗, 一种基于存储器特性的新型剂量探测方法, 2023-04-21, 中国, ZL201910788765.9.

(2) 李豫东; 文林; 冯婕; 周东; 张兴尧; 郭旗, 一种基于光斑的电荷耦合器件电荷转移效率通用测试方法, 2019-08-16, 中国, ZL201710507786.X.

(3) 李豫东; 冯婕; 马林东; 文林; 周东; 郭旗, 辐照后互补金属氧化物半导体光子转移曲线和转换增益的测试方法, 2018-10-12, 中国, ZL201710077573.8.

(4) 李豫东; 文林; 冯婕; 施炜雷；于新；玛利娅·黑尼；郭旗, 互补金属氧化物半导体图像传感器单粒子效应试验图像在线采集方法, 2018-03-26, 中国, ZL201810250683.4.

(5) 李豫东，于刚，于新，何承发，文林，郭旗，用于元器件电离辐照的X射线辐照方法，2017-09-29，ZL201610516217.7

研究领域： 

1、半导体材料与器件辐射效应机理 

2、抗辐射电子器件与智能装备 

3、光电成像器件与成像系统