姓 名: | 刘炳凯 |
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性 别: | 男 |
职 务: | |
职 称: | 助理研究员 |
通讯地址: | 乌鲁木齐市北京南路40号附1号 |
邮政编码: | 830011 |
电子邮件: | liubk@ms.xjb.ac.cn |
简历:
2022.07-至今,中国科学院新疆理化技术研究所,助理研究员
2017.09-2022.06,中国科学院大学,微电子学与固体电子学,博士(硕博连读)
2013.09-2017.06,新疆大学,物理学,学士
主要研究领域及成就:
从事光电成像器件辐射损伤机理与抗辐射加固技术研究,主持国家自然基金青年项目、中国科学院重点部署任务子课题、新疆自治区天池英才青年博士等6项科研项目,在IEEE TED、IEEE TNS、RADECS等半导体器件辐射效应权威期刊及国际会议发表论文24篇,授权发明专利2件,软件著作权登记1项,出版译著1本。
主要荣誉:
获新疆维吾尔自治区科技进步一等奖、中国科学院院长奖、教育部博士生国家奖学金、中国科学院朱李月华优秀博士生奖学金等多项奖励,入选中国科协青年人才托举工程、新疆维吾尔自治区天池英才青年博士和优秀博士后人才。
代表性文章:
[1] Liu Bingkai, Li Yudong, Wen Lin, Zhao Jinghao, Zhou Dong, Feng Jie and Guo Qi, Displacement damage effects in backside illuminated CMOS image sensors, IEEE Transactions on Electron Devices, 69(6): 2907-2914, 2021.
[2] Liu Bingkai, Li Yudong, Wen Lin, Feng Jie, Cai Yulong and Guo Qi, High total ionizing dose effects on backside-illuminated CMOS image sensors, IEEE Transactions on Nuclear Science, 71(11): 2393-2399, 2024.
[3] Liu Bingkai, Li Yudong, Wen Lin, Zhou Dong, Feng Jie, Zhang Xiang, Cai Yulong, Fu Jing and Guo Qi, Analysis of dark signal degradation caused by 1 MeV neutron irradiation on backside-illuminated CMOS image sensors, Chinese Journal of Electronics, 30(1): 180-184, 2021.
[4] Liu Bingkai, Li Yudong, Wen Lin, Zhou Dong, Feng Jie, Zhang Xiang, Cai Yulong, Fu Jing and Guo Qi, Investigation of random telegraph signal in CMOS image sensors irradiated by protons, Journal of Nuclear Science and Technology, 58(5): 610-619, 2021.
[5] Li Yudong1, Liu Bingkai1, Wen Lin, Wei Ying, Zhou Dong, Feng Jie, Guo Qi, Role of the oxide trapped charges in charge coupled device ionizing radiation induced dark signal, Radiation Physics and Chemistry, 189: 109722, 2021.
[6] Liu Bingkai, Li Yudong, Wen Lin, Zhao Xiang and Guo Qi. Effects of hot pixels on pixel performance on backside illuminated complementary metal oxide semiconductor (CMOS) image sensors, Sensors, 23(13): 6159, 2023.
[7] Liu Bingkai, Li Yudong, Wen Lin, Zhou Dong, Feng Jie, Zhang Xiang, Cai Yulong, Fu Jing, Chen JiaWei, Guo Qi, Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors, Results in Physics, 19: 103443, 2020.
[8] Liu Bingkai, Li Yudong, Wen Lin, Zhou Dong, Feng Jie, Ma Lindong, Zhang Xiang, Cai Yulong, Wang Zhiming, Fu Jing, Guo Qi, Ma Ding, A study of hot pixels induced by proton and neutron irradiations in charge coupled devices, Radiation Effects and Defects in Solids, 175(5-6): 540-550, 2020.
[9] 刘炳凯, 李豫东, 文林, 周东, 郭旗, 辐射导致CMOS图像传感器暗电流随机电报信号, 原子能科学技术, 55(12): 2143-2150, 2021.
[10] 李豫东, 文林, 冯婕, 刘炳凯, 郭旗, 图像传感器基本原理, 北京: 科学出版社, 2024. 11.
代表性专利:
[1] 李豫东, 刘炳凯, 文林, 周东, 冯婕, 郭旗. 一种用于电离总剂量辐照后光电成像器件随机电报信号的测试方法, 中国, 发明专利, 授权号:ZL202111188148.9.
[2] 文林, 刘炳凯, 李豫东, 周东, 冯婕, 郭旗. 一种用于辐照后光电成像器件暗电流激活能测试方法, 中国, 发明专利, 授权号:ZL202111187762.3.
[3] 刘炳凯, 李豫东, 文林, 施炜雷, 郭旗. RTS像素检测与参数提取程序, 软件著作权, 授权号:2020SR0508994.
研究领域:
光电成像器件辐射效应与抗辐射加固技术研究
研究领域: