2019/11-至今 中国科学院新疆理化技术研究所，研究员 

2012/11-2019/10 中国科学院新疆理化技术研究所，副研究员 

2012/07-2012/10中国科学院新疆理化技术研究所，助理研究员 

2007/09-2012.06，中国科学院大学，微电子学与固体电子学专业，博士学位 

2002/09-2006/07，西安理工大学，电子科学与技术专业，学士学位 

主要研究领域及成就： 

主要从事CMOS器件辐射效应研究，研究成果已应用于本领域主要器件研制单位、工程单位、科研单位，为CMOS器件设计及评估提供了支撑。主持完成了国家自然科学基金等科研项目10余项；公开发表数据库收录论文80余篇，其中SCI/EI收录60余篇；授权发明专利2项。

主要荣誉： 

2021年度新疆维吾尔自治区科技进步一等奖（第一完成人） 

2015年度新疆维吾尔自治区科技进步一等奖（第九完成人） 

第八届中国电子学会优秀科技工作者 

代表性文章： 

[1] Jiangwei Cui*, Qiwen Zheng*, Yudong Li, et.al, Impact of High TID Irradiation on Stability of 65 nm SRAM Cells. IEEE Transactions on Nuclear Science, 2022, 69(5): 1044-1050, SCI 

[2] Qiwen Zheng*, Jiangwei Cui*, Xuefeng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo. Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology. IEEE Transactions on Nuclear Science, 2021, 68(10): 2516-2523, SCI 

[3] Qiwen Zheng*, Jiangwei Cui*, Xuefeng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo. Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers. IEEE Transactions on Nuclear Science, 2021, 68(7): 1423-1429, SCI 

[4] Xu Cui, Jiangwei Cui*, Qiwen Zheng*, Ying Wei, Yudong Li, Qi Guo. Bias Dependence of Total Ionizing Dose Effects in 22 nm Bulk nFinFETs. Radiation Effects and Defects in Solids, 2022, 177(3-4), on line, SCI 

[5] Jiangwei Cui, Xuefeng Yu, Diyuan Ren, Jian Lu, The Influence of Channel Size on Total Dose Irradiation and Hot-Carrier Effects of Sub-Micro NMOSFET, Acta Phys. Sin., 2012, 61(2): 026102, SCI 

[6] Jiangwei Cui, Xuefeng Yu, Diyuan Ren, Relationship between silicon-on-insulator kink and radiation effects, International Journal of Modern Physics E, 2011, 20(6): 1409-1417, SCI 

[7] Jiangwei Cui, Qiwen Zheng, Bingxu Ning, Xuefeng Yu, Kai Zhao, Ying Wei, Wu Lu, Chengfa He, Diyuan Ren, Fang Yu, Liewei Xu, Qi Guo, Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs, 2018, 2018 IEEE Radiation Effects Data Workshop (REDW), EI 

[8] Baoshun Wang, Jiangwei Cui*, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi, The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET, Journal of Semiconductors, 2020, 41(12): 122102, EI 

[9] Jiangwei Cui, Qiwen Zheng, Xuefeng Yu, Zhongchao Cong, Hang Zhou, Qi Guo, Lin Wen, Ying Wei and Diyuan Ren, Hot-carrier effects on irradiated deep submicron NMOSFET, Journal of Semiconductors, 2014, 35(07): 56-59, EI 

[10] Jiangwei Cui, Yaoguo Xue, Xuefeng Yu, Diyuan Ren, Jian Lu, Xingyao Zhang, Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs, Journal of Semiconductors, 2012, 33(1): 014006, EI 

代表性专利： 

[1] 崔江维，郑齐文，魏莹，孙静，余学峰，郭旗，陆妩，何承发，任迪远，一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法，ZL201711329107.0 

[2] 郑齐文，崔江维，李小龙，魏莹，余学峰，李豫东，郭旗；一种电路级总剂量辐射效应仿真方法，ZL 202011125626.7 

[3] 郑齐文，崔江维，李小龙，魏莹，余学峰，李豫东，郭旗，一种总剂量效应与工艺波动耦合的电路仿真方法，ZL202011125363.X 

研究领域： 

微电子学与固体电子学